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IRF9953 - Power MOSFET

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Bldg. , 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR.

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Full PDF Text Transcription

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PD - 9.1560A PRELIMINARY l l l l l l IRF9953 HEXFET® Power MOSFET 8 7 Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S1 G1 S2 G2 1 D1 D1 D2 D2 2 VDSS = -30V RDS(on) = 0.25Ω 3 4 6 5 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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