IRF9952QPBF Datasheet | International Rectifier

- 96115 IRF9952QPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 6 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.25Ω Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional Features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating...