IRF9952QPBF Datasheet PDF (Power MOSFET) | Download International Rectifier (now Infineon) IRF9952QPBF

Part number	IRF9952QPBF
Manufacturer	International Rectifier (now Infineon)
File Size	303.40 KB
Description	Power MOSFET
Datasheet	IRF9952QPBF Datasheet

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Overview

PD - 96115 IRF9952QPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch P-Ch VDSS 30V -30V 6 5 P-CHANNEL MOSFET Top View RDS(on) 0.10Ω 0.

Key Features

of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

IRF9952QPBF - Power MOSFET

Datasheet Details

General Description

Overview

Key Features

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