IRFBE30SPBF Datasheet | International Rectifier

Description Third Generation HEXFETs from International Rectifier provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D2Pak IRFBE30S TO-262 IRFBE30L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 4.1 2.6 16 125 1.0 ± 20 260 4.1 13 2.0 -55 to + 150 Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current W W/°C V m J A m J V/ns °C c Peak Diode Recovery dv/dt e Repetitive Avalanche Energy Operating Junction and Storage Temperature Range c d Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw 300 (1.6mm from case ) 10 lbf- in (1.1N- m) Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Min. - - - - - - - - - Typ. - - - 0.50 - - - Max. - - - 62 Units °C/W .irf. 07/06/04 IRFBE30S/LPb F Static @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer...