IRFE310
IRFE310 is HEXFET TRANSISTOR manufactured by International Rectifier.
feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required.
Product Summary
Part Number IRFE310 BVDSS 400V RDS(on) 3.6Ω ID 1.25A
Features
: n n n n n n
Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Peak Diode Recovery dv/dt
- Operating Junction Storage Temperature Range Surface Temperature Weight IRFE310, JANTX-, JANTXV-, 2N6786U Units 1.25 A 0.80 5.5 15 W 0.12 W/°C ±20 V 34 m J 2.8 V/ns -55 to 150 o
300 ( for 5 seconds) 0.42 (typical) g
.irf.
10/9/98
IRFE310, JANTX-, JANTXV-, 2N6786U Devices
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
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- 2.0 0.87
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- Typ Max Units
- 0.37
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- 5.0 15
- - 3.6 3.7...