IRFE330 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. Product Summary Part Number IRFE330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A Features : n n n n n n Hermetically Sealed Simple Drive Requirements Ease of Paralleling Small footprint Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy  Peak Diode Recovery dv/dt Ž Operating Junction Storage Temperature Range Surface Temperature Weight IRFE330, JANTX-, JANTXV-, 2N6800U Units 3.0 A 2.0 12 25 W 0.20 W/K  ±20 V 0.51 m J 8.4 V/ns -55 to 150 o 300 ( for 5 seconds) 0.42 (typical) g .irf. 3/25/98 IRFE330, JANTX-, JANTXV-, 2N6800U Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - - 2.0 2.4 - - - - - - - - - - - - - Typ Max Units - 0.35 - - - - - - - - - - - - - - - 1.8 4.3 - - 1.0 1.15 4.0 - 25 250 100 -100 33 5.8 17 30 35 55...