IRFI260 Datasheet | International Rectifier

feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. N-CHANNEL Product Summary Part Number IRFI260 BVDSS 200V RDS(on) 0.060Ω ID 45A- Features : n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current  Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ‚ Avalanche Current  Repetitive Avalanche Energy  Peak Diode Recovery dv/dt - Operating Junction Storage Temperature Range Lead Temperature Weight - ID current limited by pin diameter 300 (0.063 in. (1.6mm) from case for 10 sec.) 10.9 (typical) 45- 29 180 300 2.4 ±20 700 45 30 4.3 -55 to 150 Units A W W/K … V m J A m J V/ns o C g To Order Previous Datasheet IRFI260 Device Index Next Data Sheet Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BV DSS Drain-to-Source Breakdown Voltage ∆ BVDSS/ ∆TJ Temp. Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain Current Min. - - - 2.0 22 - - - - - - - - - - - - Typ. Max. Units - - V Test Conditions I GSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf...