n n
Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelets
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt.
Full PDF Text Transcription for IRFI260 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRFI260. For precise diagrams, and layout, please refer to the original PDF.
Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD 9.809 HEXFET® TRANSISTOR 200 Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rec...
View more extracted text
Volt, 0.060Ω, HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves ver y low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits and virtually any application where high reliabilit
More Datasheets from International Rectifier (now Infineon)
IRFI260 Datasheet
