Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- T O E IA -4 8 1 & E IA -5 4 1 . 3 . E A C H O 3 30 .0 0 (1 3 .0 0 ) R E E L C O N T A IN S 2 ,5 0 0 D E V IC E S . 1 3 .2 0 (.5 1 9 ) 1 2 .8 0 (.5 0 4 ) 1 5 .40 (.6 0 7) 1 1 .90 (.4 6 9) 4 7 .1 0 (.2 7 9 ) 6 .9 0 (.2 7 2 )
1 6 .3 0 (.6 4 1 ) 1 5 .7 0 (.6 1 9 )
2 .3 0 (.0 9 0 ) 2 .1 0 (.0 8 3 )
330.00 (13.000) M AX. 5 0.00 (1 .9 6 9 ) M IN . N O TE S : 1 . O U T LIN E C O M F O R M S T O E IA -4 1 8 -1 . 2 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . . 3 . D IM E N S IO N M E.
IRFL1006 Datasheet
