Datasheet4U Logo Datasheet4U.com

IRFM340 - N-CHANNEL HEXFET MOSFETTECHNOLOGY

Key Features

  • n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ P.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRFM350 N-CHANNEL POWER MOSFET Seme LAB
IRFM360 N-CHANNEL POWER MOSFET TT
IRFM014A Power MOSFET Samsung
IRFM054 N-CHANNEL POWER MOSFET Seme LAB
IRFM110A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRFM360 N-Channel MOSFET
IRFM044 N-Channel Power MOSFET
IRFM064 POWER MOSFET THRU-HOLE (TO-254AA)
IRFM140 HEXFET TRANSISTOR
IRFM240 POWER MOSFET THRU-HOLE (TO-254AA)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 90490D POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM340 IRFM340 JANTX2N7221 JANTXV2N7221 REF:MIL-PRF-19500/596 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.55 Ω ID 10A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability.