IRFP460APBF Description
l Full Bridge l PFC Boost Notes through are on page 8 Document Number: 1 IRFP460APbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 500 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
IRFP460APBF Key Features
- Switch Mode Power Supply ( SMPS )
- Uninterruptable Power Supply
- High speed power switching
- Lead-Free Benefits
- Low Gate Charge Qg results in Simple Drive Requirement
- Improved Gate, Avalanche and dynamic dv/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss specified ( See AN1001) HEXFET® Power MOSFET VDSS Rds(on) max ID 500V 0.27Ω 20A TO-247AC