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IRFP460AS - Power MOSFET

General Description

Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 6.20 [.637] 16.00 [.630] 4 0.95 [.037] 0.35 [.014] 20.30 [.799] 19.70 [.776] 2X R D C 1 5.65 [.222] 4.65 [.183] 2 3 3.0 [.118] MAX. 0.20 [.225] D 5.45 [.215] 2X 0.25 [.010] 1.40 [.055] 1.00 [.040] D C A 2X 2.65 [.104] 2.15 [.085] LEAD AS.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD-94011A SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.