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IRFP460NPBF - HEXFET Power MOSFET

Key Features

  • rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 1.8mH RG = 25Ω, IAS = 20A. (See Figure 12) ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Data and specifications subject to change without notice. IR WORLD.

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Full PDF Text Transcription (Reference)

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SMPS MOSFET PD-94809 IRFP460NPbF HEXFET® Power MOSFET Applications Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Effective Coss specified ( See AN1001) VDSS 500V Rds(on) max 0.