IRFR2407 Overview
l HEXFET® Power MOSFET G S RDS(on) = 0.026Ω ID = 42A Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
IRFR2407 Key Features
- Straight Lead (IRFU2407)
- Advanced Process Technology
- Dynamic dv/dt Rating
- Fast Switching
