IRG4BC30W-S Datasheet | International Rectifier

Features - Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications - Industry-benchmark switching losses improve efficiency of all power supply topologies - 50% reduction of Eoff parameter - Low IGBT conduction losses - Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.10V @VGE = 15V, IC = 12A n-channel Benefits - Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 k Hz ("hard switched" mode) - Of particular benefit to single-ended converters and boost PFC topologies 150W and higher - Low conduction losses and minimal minority-carrier rebination make these an excellent option for resonant mode switching as well (up to >>300 k Hz) D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy - Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 23 12 92 92 ± 20 180 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) Units V m J W °C Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)- Typ. - - - - - - Max. 1.2 40 Units °C/W - When mounted on 1" square PCB (FR-4 or G-10 Material ). For remended footprint and soldering techniques refer to application note...