Download IRG4MC40U Datasheet PDF
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IRG4MC40U Description

PD -94305D IRG4MC40U INSULATED GATE BIPOLAR TRANSISTOR.

IRG4MC40U Key Features

  • Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof UltraFast Speed Operation 8kHz
  • 40kHz, > 200kHz in Resonent Mode
  • High Operating Frequency
  • Switching-loss Rating includes all "tail" Losses
  • Ceramic Eyelets
  • Generation 4 IGBT's offer highest efficiency available
  • IGBT's optimized for specified application conditions
  • Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (