IRG4MC50F - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRG4MC50F
Manufacturer	International Rectifier
File Size	285.20 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG4MC50F Datasheet
Additional preview pages of the IRG4MC50F datasheet.

Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets C Fast Speed IGBT VCES = 600V G E VCE(on) max = 2.0V @VGE = 15V, IC = 30A n-channel Benefits.
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specified.

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Published: Oct 19, 2006 |