IRG4MC50F Description
PD -94274A IRG4MC50F INSULATED GATE BIPOLAR TRANSISTOR.
IRG4MC50F Key Features
- Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz
- 8 kHz High operating frequency Switching-loss rating includes all "tail" losses Ceramic eyelets
- Generation 4 IGBT's offer highest efficiency available
- IGBT's optimized for specified application conditions
- Designed to be a "drop-in" replacement for equivalent IR Hi-Rel Generation 3 IGBT's Insulated Gate Bipolar Transistors (