IRG5K75HF06A
IRG5K75HF06A is IGBT Half-Bridge manufactured by International Rectifier.
Features
Low VCE(ON) and Switching Losses 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area POWIR 34™ Package Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard Ro HS pliant, Environmental Friendly
Base Part Number
Package Type
POWIR 34™
Standard Pack
Box
Quantity
Orderable Part Number
Absolute Maximum Ratings of IGBT
VCES VGES
Collector to Emitter Voltage Continuous Gate to Emitter Voltage
IC Continuous Collector Current ICM Pulse Collector Current
TC = 80°C TC = 25°C TJ = 150°C
PD Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
TJ Maximum IGBT Junction Temperature
TJOP Maximum Operating Junction Temperature Range Tstg Storage Temperature
600 ±20 75 140 150 330 150 -40 to +150 -40 to +125
V V A A A W °C °C °C
1 .irf. © 2014 International Rectifier
Submit Datasheet Feedback September 2, 2014
IRG5K50P5K50PM06E
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Unit Test Conditions
V(BR)CES VGE(th)
Collector to Emitter Breakdown Voltage
Gate Threshold Voltage
600 3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current
4.5 1.80 2.00
5.5...
