IRGB4715DPbF Datasheet Insulated Gate Bipolar Transistor

Manufacturer: International Rectifier (now Infineon)

Overview: VCES = 650V IC = 15A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.

Download the IRGB4715DPbF datasheet PDF. This datasheet also includes the IRGS4715DPBF variant, as both parts are published together in a single manufacturer document.

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IRGB4715DPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB4715DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	642.58 KB
Description	Insulated Gate Bipolar Transistor
Download	IRGB4715DPbF Download (PDF)

Key Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRGS4715DPbF D2‐Pak E C G IRGB4715DPbF TO‐220AB G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

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