IRGB4715DPbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGB4715DPbF, a member of the IRGS4715DPBF Insulated Gate Bipolar Transistor family.

Product Overview

International Rectifier

Part number	IRGB4715DPbF
Manufacturer	International Rectifier
File Size	642.58 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4715DPbF Datasheet
Additional preview pages of the IRGB4715DPbF datasheet.

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant IRGB4715DPbF IRGS4715DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode C C G E n-channel G CE IRGS4715DPbF D2‐Pak E C G IRGB4715DPbF TO‐220AB G Gate C Collector E Emitter Benefits High Efficiency in a Wide Range of.

Other Datasheets by International Rectifier

Published: Feb 16, 2016 |