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IRGB6B60K - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGB6B60K INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB6B60K

Datasheet Details

Part number	IRGB6B60K
Manufacturer	International Rectifier
File Size	285.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60K Datasheet
Additional preview pages of the IRGB6B60K datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K.

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Published: Aug 17, 2007 |