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IRGB6B60K Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

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IRGB6B60K insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRGB6B60K
Manufacturer	International Rectifier (now Infineon)
File Size	285.73 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60K Datasheet

Overview

www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR.

Key Features

Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K.

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