IRGB6B60KPbF Description
INSULATED GATE BIPOLAR TRANSISTOR PD - 95644A IRGB6B60KPbF IRGS6B60KPbF IRGSL6B60KPbF.
IRGB6B60KPbF Key Features
- Low VCE (on) Non Punch Through IGBT Technology
- 10µs Short Circuit Capability
- Square RBSOA
- Positive VCE (on) Temperature Coefficient
- Lead-Free
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Excellent Current Sharing in Parallel Operation