IRGB6B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Part number	IRGB6B60KD
Manufacturer	International Rectifier
File Size	349.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB6B60KD Datasheet
Additional preview pages of the IRGB6B60KD datasheet.

Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10µs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO.

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Published: Aug 17, 2007 |