IRGB6B60KD
IRGB6B60KD is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
..
- 94381E
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.0A, TC=100°C
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
G E tsc > 10µs, TJ=150°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. n-channel
VCE(on) typ. = 1.8V
TO-220AB IRGB6B60KD
D2Pak IRGS6B60KD Max.
600 13 7.0 26 26 13 7.0 26 ± 20 90 36 -55 to...
