IRGBC30S Overview
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C...
IRGBC30S Key Features
- Switching-loss rating includes all "tail" losses
- Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve