IRGBC30S - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

Datasheet Details

Part number	IRGBC30S
Manufacturer	International Rectifier
File Size	118.51 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGBC30S Datasheet
Additional preview pages of the IRGBC30S datasheet.

Product details

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.

Features

Switching-loss rating includes all "tail" losses.
Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency Curve G E C Standard Speed IGBT VCES = 600V VCE(sat) ≤ 2.2V @VGE = 15V, I C = 18A n-channel.

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Published: Jun 5, 2007 |