Datasheet Details
| Part number | IRGIH50F |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 565.05 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGIH50F_InternationalRectifier.pdf |
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Overview: PD -90930B IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR.
| Part number | IRGIH50F |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 565.05 KB |
| Description | INSULATED GATE BIPOLAR TRANSISTOR |
| Datasheet | IRGIH50F_InternationalRectifier.pdf |
|
|
|
n-channel Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET.
They provide substantial benefits to a host of high-voltage, high-current applications.
The performance of various IGBTs varies greatly with frequency.
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