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IRGP4266D-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGP4266D-EPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGP4266D-EPbF

Datasheet Details

Part number	IRGP4266D-EPbF
Manufacturer	International Rectifier
File Size	874.09 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGP4266D-EPbF Datasheet
Note	This datasheet PDF includes multiple part numbers: IRGP4266D-EPbF, IRGP4266DPbF. Please refer to the document for exact specifications by model.
Additional preview pages of the IRGP4266D-EPbF datasheet.

Product details

Features

Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient G E n-channel G Gate GCE IRGP4266DPbF TO‐247AC C Collector E GC IRGP4266D‐EPbF TO‐247AD E Emitter Benefits High Efficiency in a Wide Range of.

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Published: Mar 8, 2016 |