Datasheet Summary
IRGP4266DPbF IRGP4266D-EPbF
VCES = 650V IC = 90A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
Applications
- Industrial Motor Drive
- UPS
- Solar Inverters
- Welding
Features
Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Co-efficient
E n-channel
G Gate
IRGP4266DPbF TO‐247AC
C Collector
E GC
IRGP4266D‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel...