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IRGS8B60K Description

PD - 94545C INSULATED GATE BIPOLAR TRANSISTOR.

IRGS8B60K Key Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
  • Benchmark Efficiency for Motor Control
  • Rugged Transient Performance
  • Low EMI
  • Excellent Current Sharing in Parallel Operation