IRGS8B60KPbF Description
PD - 95645A INSULATED GATE BIPOLAR TRANSISTOR.
IRGS8B60KPbF Key Features
- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperatu
- Benchmark Efficiency for Motor Control
- Rugged Transient Performance
- Low EMI
- Excellent Current Sharing in Parallel Operation