Datasheet4U Logo Datasheet4U.com

IRGS8B60KPbF - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRGS8B60KPbF, a member of the IRGB8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ.

📥 Download Datasheet

Datasheet preview – IRGS8B60KPbF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 95645A INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB D2Pak IRGB8B60KPbF IRGS8B60K TO-262 IRGSL8B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.
Published: |