IRGS8B60KPbF
IRGS8B60KPbF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- Part of the IRGB8B60KPbF comparator family.
- Part of the IRGB8B60KPbF comparator family.
Features
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- Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.
IRGB8B60KPb F IRGS8B60KPb F IRGSL8B60KPb F
VCES = 600V IC = 20A, TC=100°C
G E tsc>10µs, TJ=150°C
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation. n-channel
VCE(on) typ. = 1.8V
TO-220AB D2Pak IRGB8B60KPb F IRGS8B60K
TO-262 IRGSL8B60K
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current
Max.
600 28 19
Units
V A c
56 56 ±20 167 83 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) V W
Gate-to-Emitter Voltage Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case- IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount
Min.
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- Typ.
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- 0.50
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- - 1.44
Max.
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