IRHF58034CM - RADIATION HARDENED POWER MOSFET THRU-HOLE
International Rectifier (now Infineon)
Key Features
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Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.
Full PDF Text Transcription for IRHF58034CM (Reference)
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IRHF58034CM. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93825D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω ...
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Part Number Radiation Level RDS(on) IRHY57034CM 100K Rads (Si) 0.04Ω IRHY53034CM 300K Rads (Si) IRHY54034CM 500K Rads (Si) IRHF58034CM 1000K Rads (Si) 0.04Ω 0.04Ω 0.048Ω IRHY57034CM JANSR2N7483T3 60V, N-CHANNEL REF: MIL-PRF-19500/702 5 TECHNOLOGY ID QPL Part Number 18A* JANSR2N7483T3 18A* JANSF2N7483T3 18A* JANSG2N7483T3 18A* JANSH2N7483T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).
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IRHF58034CM Datasheet
