Download the IRHF58230 datasheet PDF.
This datasheet also covers the IRHF53230 variant, as both devices belong to the same radiation gardened power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear.
Note: The manufacturer provides a single datasheet file (IRHF53230_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHF58230 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHF58230. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93788A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads...
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rt Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) IRHF54230 IRHF58230 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.22Ω 0.22Ω 0.22Ω 0.275Ω ID 7.3A 7.3A 7.3A 7.3A IRHF57230 200V, N-CHANNEL 4 # TECHNOLOGY c TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
More Datasheets from International Rectifier (now Infineon)
IRHF58230 Datasheet
