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IRHF58230 - RADIATION GARDENED POWER MOSFET

This page provides the datasheet information for the IRHF58230, a member of the IRHF53230 RADIATION GARDENED POWER MOSFET family.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear.

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www.DataSheet4U.com PD - 93788A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57230 100K Rads (Si) IRHF53230 300K Rads (Si) IRHF54230 IRHF58230 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.22Ω 0.22Ω 0.22Ω 0.275Ω ID 7.3A 7.3A 7.3A 7.3A IRHF57230 200V, N-CHANNEL 4 # TECHNOLOGY c TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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