Download the IRHF58130 datasheet PDF.
This datasheet also covers the IRHF53130 variant, as both devices belong to the same radiation hardened power mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear.
Note: The manufacturer provides a single datasheet file (IRHF53130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHF58130 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHF58130. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93789A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads...
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rt Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08Ω 0.08Ω 0.08Ω 0.10Ω ID 11.7A 11.7A 11.7A 11.7A IRHF57130 100V, N-CHANNEL R5 TECHNOLOGY TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
More Datasheets from International Rectifier (now Infineon)
IRHF58130 Datasheet
