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IRHF58130 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHF58130, a member of the IRHF53130 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Œ Max. Power Dissipation Linear.

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Datasheet Details

Part number IRHF58130
Manufacturer International Rectifier
File Size 262.12 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHF58130 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93789A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level IRHF57130 100K Rads (Si) IRHF53130 300K Rads (Si) IRHF54130 IRHF58130 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.08Ω 0.08Ω 0.08Ω 0.10Ω ID 11.7A 11.7A 11.7A 11.7A IRHF57130 100V, N-CHANNEL R5 TECHNOLOGY ™ TO-39 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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