IRHLA7670Z4 Datasheet | International Rectifier

Features : n n n n n n n n n 5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings (Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page Pre-Irradiation N-Channel 0.8 0.5 3.2 0.6 0.005 ±10 16 Á 0.8 0.06 10.2 Â -55 to 150 o C P-Channel -0.56 -0.35 -2.24 0.6 Units W/°C ±10 26 ² -0.56 0.06 -5.79 ³ V m J A m J V/ns 300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical) g .irf. 03/17/08 .Data Sheet.in IRHLA7670Z4, 2N7633M2 Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Pre-Irradiation Min - - 1.0 - 0.23 - - - - - - - - - - - - Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified) Typ Max Units - 0.067 - -...