IRHLA7970Z4 Datasheet | International Rectifier

Features : n n n n n n n n n n 5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary N-Channel Available IRHLA770Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = -4.5V, TC=25°C ID @ VGS = -4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -0.56 -0.35 -2.24 0.6 0.005 ±10 26 -0.56 0.06 -5.79 -55 to 150 Pre-Irradiation Units W/°C V m J A m J V/ns °C 300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical) g .irf. 03/17/08 .Data Sheet.in IRHLA7970Z4, 2N7630M2 Pre-Irradiation Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter Min Typ Max Units - -0.063 - - 3.2 - - - - - - - - - - - - 20 - - 1.36 V V/°C Ω Test Conditions VGS = 0V, ID = -250µA Reference to 25°C, ID = -1.0m A VGS = -4.5V, ID = -0.35A VDS = VGS, ID = -250µA VDS = -10V, IDS = -0.35A à VDS= -48V ,VGS= 0V VDS = -48V, VGS = 0V, TJ =125°C VGS = -10V VGS = 10V VGS = -4.5V, ID = -0.56A VDS = -30V VDD = -30V, ID = -0.56A, VGS = -5.0V, RG = 24Ω à BVDSS Drain-to-Source Breakdown Voltage -60 ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown - Voltage RDS(on) Static Drain-to-Source On-State - Resistance VGS(th) Gate Threshold Voltage -1.0 - ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance 0.7 IDSS Zero Gate Voltage Drain Current - - IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain...