IRHLA770Z4 Datasheet | International Rectifier

Features : n n n n n n n n n n 5V CMOS and TTL patible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary P-Channel Available IRHLA7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 0.8 0.5 3.2 0.6 0.005 ±10 16 0.8 0.06 10.2 -55 to 150 Pre-Irradiation Units W/°C V m J A m J V/ns °C 300 (0.63 in./1.6 mm from case for 10s) 0.52 (Typical) g .irf. 03/17/08 .Data Sheet.in IRHLA770Z4, 2N7620M2 Pre-Irradiation Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage ∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 1.0 - 0.23 - - - - - - - - - - - - Typ Max Units - 0.067 - - -4.7 - - - - - - - - - -...