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IRHLF7930Z4 - (IRHLF79x0Z4) POWER MOSFET

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Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLF770Z4 Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Fa.

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www.DataSheet4U.com PD - 94685B RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.2Ω -1.6A IRHLF7930Z4 300K Rads (Si) 1.2Ω -1.6A IRHLF7970Z4 60V, P-CHANNEL TECHNOLOGY c International Rectifier’s R7 TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within accptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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