IRHLF7970Z4 Datasheet | International Rectifier

Features : n n n n n n n n n 5V CMOS and TTL patible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight plimentary N-Channel Available IRHLF770Z4 Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page -1.6 -1.0 -6.4 5.0 0.04 ±10 10 -1.6 0.5 -4.0 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 (0.063in/1.6mm from case for 10s) 0.98 ( Typical ) g .irf. 04/07/04 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min -60 - - -1.0 1.0 - - - - - - - - - - - - Typ Max Units - -0.06 - - - - - - - - - - - - - - 7.0 - - 1.2 -2.0 - -1.0 -10 -100 100 4.0 1.5 1.8 18 20 15...