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IRHLF7970Z4 - (IRHLF79x0Z4) POWER MOSFET

Download the IRHLF7970Z4 datasheet PDF. This datasheet also covers the IRHLF7930Z4 variant, as both devices belong to the same (irhlf79x0z4) power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary N-Channel Available IRHLF770Z4 Absolute Maximum Ratings Parameter ID @ VGS = -4.5V, TC = 25°C ID @ VGS = -4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Fa.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRHLF7930Z4_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRHLF7930Z4 (IRHLF79x0Z4) POWER MOSFET
IRHLF730Z4 N-CHANNEL POWER MOSFET
IRHLF73110 (IRHLF77110 / IRHLF73110) POWER MOSFET
IRHLF740Z4 (IRHLF7x0Z4) POWER MOSFET
IRHLF740Z4 (IRHLF7x0Z4) POWER MOSFET
IRHLF770Z4 N-CHANNEL POWER MOSFET
IRHLF77110 (IRHLF77110 / IRHLF73110) POWER MOSFET
IRHLF780Z4 (IRHLF7x0Z4) POWER MOSFET
IRHLF780Z4 (IRHLF7x0Z4) POWER MOSFET
IRHLF7S7214 Radiation Hardened Logic Level Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com PD - 94685B RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID IRHLF7970Z4 100K Rads (Si) 1.2Ω -1.6A IRHLF7930Z4 300K Rads (Si) 1.2Ω -1.6A IRHLF7970Z4 60V, P-CHANNEL TECHNOLOGY c International Rectifier’s R7 TM Logic Level Power Mosfets provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within accptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.