This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHLNA797064 |
|---|---|
| Datasheet | IRHLNA797064 IRHLNA793064 Datasheet (PDF) |
| File Size | 232.78 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | (IRHLNA79x064) POWER MOSFET |
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The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage parator and operational amplifiers.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHLNA793064 | (IRHLNA79x064) POWER MOSFET |
| IRHLNA73064 | POWER MOSFET |
| IRHLNA77064 | POWER MOSFET |
| IRHLNJ77034 | POWER MOSFET |
| IRHLNJ793034 | P-Channel MOSFET |
| IRHLNJ797034 | P-Channel MOSFET |
| IRHLNKC797034 | Radiation Hardened Logic level Power MOSFET |
| IRHLNM73110 | Power MOSFET |
| IRHLNM77110 | Power MOSFET |
| IRHLNM7S7214 | Radiation Hardened Logic Level Power MOSFET |
