IRHMS57064 Datasheet | International Rectifier

Features : n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Units 45- 45- A 208 W W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight ±20 824 45 20 4.3 -55 to 150 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) V m J A m J V/ns o C g - Current is limited by package For footnotes refer to the last page .irf. 10/19/11 IRHMS57064, JANSR2N7470T1 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage - - VGS = 0V, ID = 1.0m A ∆BVDSS/∆TJ Temperature Coefficient of Breakdown - 0.067 - V/°C Reference to 25°C, ID = 1.0m A Voltage RDS(on)...