IRHMS57260SE Datasheet | International Rectifier

Features : n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor Units 45 29 A 208 W W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage ±20 Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction 256 45 20.8 19.8 -55 to 150 Storage Temperature Range Lead Temperature Weight 300 (0.063 in.(1.6 mm from case for 10s)) 9.3 ( Typical) V m J A m J V/ns o C g For footnotes refer to the last page .irf. 09/07/04 IRHMS57260SE, JANSR2N7476T1 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Pre-Irradiation Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) gfs...