IRHMS57160 Overview
PD-95889D IRHMS57160 RADIATION HARDENED JANSR2N7471T1 POWER MOSFET 100V, N-CHANNEL THRU-HOLE (Low-Ohmic TO-254AA) Product Summary REF: These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The bination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
IRHMS57160 Key Features
- Current is limited by package For footnotes refer to the last page
- 0.013 Ω