IRHMS57160 Datasheet | International Rectifier

Features : n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight n ESD Rating: Class 3B per MIL-STD-750, Method 1020 Pre-Irradiation ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Units 45- 45- A 208 W W/°C VGS EAS IAR EAR dv/dt TJ TSTG Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight ±20 493 45 20.8 6.7 -55 to 150 300 (0.063 in. /1.6 mm from case for 10s) 9.3 (Typical) V m J A m J V/ns °C g - Current is limited by package For footnotes refer to the last page .irf. 11/26/14 IRHMS57160, JANSR2N7471T1 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) gfs IDSS Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min 100 - - 2.0 42 - -...