IRHMS597Z60
IRHMS597Z60 is RADIATION HARDENED POWER MOSFET manufactured by International Rectifier.
Features
: n Low RDS(on) n Fast Switching n Single Event Effect (SEE) Hardened n Low Total Gate Charge n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Eyelets n Electrically Isolated n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = -12V, TC = 25°C Continuous Drain Current
ID @ VGS = -12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
TJ TSTG
Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range
Lead Temperature Weight
Pre-Irradiation
Units
-45- -45- A
-180
208 W
W/°C
±20 V
1250 m J
-45 A
20.8 m J
-0.6 -55 to 150
V/ns o C
300 (0.063in./1.6mm from case for 10s) 9.3 (Typical) g
- Current is limited by package For footnotes refer to the last page
.irf.
10/02/08
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown...