IRHY57133CMSE Datasheet | International Rectifier

Features : n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight - Current is limited by package For footnotes refer to the last page 18- 12 72 75 0.6 ±20 80 18 7.5 8.0 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 (0.063in./1.6mm from case for 10sec) 4.3(Typical) g .irf. 06/10/04 IRHY57133CMSE, JANSR2N7488T3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 2.5 8.5 - - - - - - - - - - - - Typ Max Units - 0.16 - - - - - - - - - - - - - -...