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IRHY57133CMSE - RADIATION HARDENED POWER MOSFET THRU-HOLE

Features

  • n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á.

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www.DataSheet4U.com PD - 94318C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ I D QPL Part Number 18A* JANSR2N7488T3 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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