n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
12 7.6 A
48
75 W
0.6 W/°C
VGS EAS I.
Full PDF Text Transcription for IRHY57230CMSE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHY57230CMSE. For precise diagrams, and layout, please refer to the original PDF.
-CHANNEL REF:MIL-PRF-19500/705 Product Summary 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
More Datasheets from International Rectifier (now Infineon)
IRHY57230CMSE Datasheet
