Datasheet4U Logo Datasheet4U.com

IRHY57230CMSE - RADIATION HARDENED POWER MOSFET

Features

  • n Single Event Effect (SEE) Hardened n Ultra Low RDS(on) n Low Total Gate Charge n Proton Tolerant n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Ceramic Package n Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current ID @ VGS = 12V, TC = 100°C Continuous Drain Current IDM Pulsed Drain Current À PD @ TC = 25°C Max. Power Dissipation Linear Derating Factor 12 7.6 A 48 75 W 0.6 W/°C VGS EAS I.

📥 Download Datasheet

Datasheet preview – IRHY57230CMSE

📁 Similar Datasheet

  • IRH-12-12.5-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-24-6.3-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-5-30-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH3 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH310 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH320 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH360 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRHM2C50SE - N-Channel Transistor (IRF)
  • IRHM53260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
  • IRHM54260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
Other Datasheets by International Rectifier
  • IRHY57230CM - RADIATION HARDENED POWER MOSFET THRU-HOLE
  • IRHY57234CMSE - RADIATION HARDENED POWER MOSFET THRU-HOLE
  • IRHY57034CM - RADIATION HARDENED POWER MOSFET THRU-HOLE
  • IRHY57130CM - (IRHY5x130CM) RADIATION HARDENED POWER MOSFET
  • IRHY57133CMSE - RADIATION HARDENED POWER MOSFET THRU-HOLE
  • IRHY57Z30CM - (IRHY5xZ30CM) RADIATION HARDENED POWER MOSFET
  • IRHY53034CM - RADIATION HARDENED POWER MOSFET THRU-HOLE
  • IRHY53130CM - (IRHY5x130CM) RADIATION HARDENED POWER MOSFET

Full PDF Text Transcription

Click to expand full text
PD - 93822B IRHY57230CMSE RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) JANSR2N7489T3 200V, N-CHANNEL REF:MIL-PRF-19500/705 Product Summary 5 TECHNOLOGY ™ Part Number Radiation Level RDS(on) ID QPL Part Number IRHY57230CMSE 100K Rads (Si) 0.23Ω 12A JANSR2N7489T3 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
Published: |