IRHY57234CMSE - RADIATION HARDENED POWER MOSFET THRU-HOLE
International Rectifier (now Infineon)
Key Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse.
Full PDF Text Transcription for IRHY57234CMSE (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHY57234CMSE. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93823 RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-257AA) Product Summary Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0...
View more extracted text
Part Number Radiation Level RDS(on) ID IRHY57234CMSE 100K Rads (Si) 0.41Ω 10A IRHY57234CMSE 250V, N-CHANNEL 4 # TECHNOLOGY c TO-257AA International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
More Datasheets from International Rectifier (now Infineon)
IRHY57234CMSE Datasheet
