IRL2203S Overview
D VDSS = 30V RDS(on) = 0.007Ω G ID = 100A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of...
IRL2203S Key Features
- Logic-Level Gate Drive
- Surface Mount
- Advanced Process Technology
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
