Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- 185) 4.20 (.165)
-B1.32 ( .052) 1.22 ( .048)
10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 (.200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
MINIM UM RE CO MM ENDED F OO TP RINT 11.43 (.450)
NO TE S: 1 DIM ENSIO NS AF T ER S OLDE R DIP. 2 DIM ENSIO NING & TO.
IRL2203S Datasheet
