Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
185) 4.20 (.165)
-B1.32 ( .052) 1.22 ( .048)
10.16 (.400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 ( .208) 4.78 ( .188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 5.08 (.200)
0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M
0.55 (.022) 0.46 (.018)
1.39 (.055) 1.14 (.045)
MINIM UM RE CO MM ENDED F OO TP RINT 11.43 (.450)
NO TE S: 1 DIM ENSIO NS AF T ER S OLDE R DIP. 2 DIM ENSIO NING & TO.
Full PDF Text Transcription for IRL2203S (Reference)
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IRL2203S. For precise diagrams, and layout, please refer to the original PDF.
PRELIMINARY PD 9.1091A IRL2203S HEXFET® Power MOSFET l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Tempe...
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nced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description D VDSS = 30V RDS(on) = 0.007Ω G ID = 100A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodati