IRL3303LPBF Description
l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.026Ω PD - 95578 G ID = 38A S Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized...
IRL3303LPBF Key Features
- Surface Mount (IRL3303S)
- Low-profile through-hole (IRL3303L)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated