Datasheet4U Logo Datasheet4U.com

IRL3303SPBF - Power MOSFET

General Description

l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.026Ω PD - 95578 G ID = 38A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRL3103 N-Channel MOSFET INCHANGE
IRL3103S N-Channel MOSFET INCHANGE
IRL3705N N-Channel MOSFET INCHANGE
IRL3705NL N-Channel MOSFET INCHANGE
IRL3705NPBF N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3303S HEXFET Power MOSFET
IRL3303 HEXFET POWER MOSFET
IRL3303L HEXFET Power MOSFET
IRL3303LPBF Power MOSFET
IRL3303PBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRL3303S) l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l l HEXFET® Power MOSFET D IRL3303LPbF IRL3303SPbF VDSS = 30V RDS(on) = 0.026Ω PD - 95578 G ID = 38A S Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.