Datasheet4U Logo Datasheet4U.com

IRL3303S Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1323B IRL3303S/L l l l l l l l Logic-Level Gate Drive Advanced Process Technology Surface Mount (IRL3303S) Low-profile through-hole (IRL3303L) 175°C Operating Temperature Fast Switching Fully Avalanche Rated HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of acmodating die sizes up to HEX-4.

Key Features

  • 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE F. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.14 (.045) 5.08 ( .200) 0.93 (.037) 3X 0.69 (.027) 0.25 (.010) M B A M 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045).

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRL3303SPBF Power MOSFET
IRL3303 HEXFET POWER MOSFET
IRL3303L HEXFET Power MOSFET
IRL3303LPBF Power MOSFET
IRL3303PBF Power MOSFET
IRL3302 HEXFET Power MOSFET
IRL3302PBF Power MOSFET
IRL3302S HEXFET Power MOSFET
IRL3302SPBF HEXFET Power MOSFET
IRL3102 Power MOSFET

IRL3303S Distributor