Datasheet4U Logo Datasheet4U.com

IRL7NJ3802 - HEXFET POWER MOSFET

Features

  • n n n n n n n Low RDS(on) Avalanche Energy Ratings Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Ener.

📥 Download Datasheet

Datasheet preview – IRL7NJ3802

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94721 HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number IRL7NJ3802 BVDSS IRL7NJ3802 12V, N-CHANNEL RDS(on) 0.0085 ID 22A* 12V Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. These devices are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits. SMD-0.
Published: |