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IRLHS6376PBF - Power MOSFET

Features

  • Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Orderable part number Package Type IRLHS6376TRPBF IRLHS6376TR2PBF PQFN Dual 2mm.

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Full PDF Text Transcription

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VDS VGS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) ID (@Tc(Bottom) = 25°C) 30 ±12 63 82 d3.4 V V mΩ mΩ A  ' *  6 ' * 6   UPQÃWD@X ' )(7 ' )(7 IRLHS6376PbF HEXFET® Power MOSFET D1 G2 S2 D2 D1 S1 G1 D2 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.
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