Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen
Resulting Benefits
Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density
⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Orderable part number
Package Type
IRLHS6376TRPBF IRLHS6376TR2PBF
PQFN Dual 2mm.
Full PDF Text Transcription for IRLHS6376PBF (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRLHS6376PBF. For precise diagrams, and layout, please refer to the original PDF.
VDS VGS RDS(on) max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) ID (@Tc(Bottom) = 25°C) 30 ±12 63 82 d3.4 V V mΩ mΩ A ' * 6 ' * 6 UPQÃWD@X ' )(7 ' )(7 IRL...
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4 V V mΩ mΩ A ' * 6 ' * 6 UPQÃWD@X ' )(7 ' )(7 IRLHS6376PbF HEXFET® Power MOSFET D1 G2 S2 D2 D1 S1 G1 D2 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.
More Datasheets from International Rectifier (now Infineon)
IRLHS6376PBF Datasheet
