IRLM120A - HEXFET Power MOSFET

Product Overview

International Rectifier

Part number	IRLM120A
Manufacturer	International Rectifier
File Size	229.86 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM120A Datasheet
Additional preview pages of the IRLM120A datasheet.

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.176 Ω (Typ. ) IRLM120A BVDSS = 100 V RDS(on) = 0.22 Ω ID = 2.3 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current.

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Published: Oct 19, 2005 |