IRLM210A - HEXFET Power MOSFET

Product Overview

International Rectifier

Part number	IRLM210A
Manufacturer	International Rectifier
File Size	270.10 KB
Description	HEXFET Power MOSFET
Datasheet	IRLM210A Datasheet
Additional preview pages of the IRLM210A datasheet.

n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max. ) @ VDS = 200V n Lower RDS(ON) : 1.185 Ω (Typ. ) IRLM210A BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Curre.

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Published: Oct 19, 2005 |